Ultra-Low C

ESD for sensitive RF and high-speed SerDes applications. Minimizes impact on impedance matching and signal integrity

Features include:

  • Less than 50 fF solutions
  • Integration into RF networks
  • IO, ESD and Power clamps integrated into macro cells for impedance matching
  • GSG/GSPSG RF macro cells that include ESD
  • Tolerate signal swings below ground
  • >30 GHz RF and >112 Gbps solutions

Ultra ESD

Protection from extreme ESD

Ultra ESD circuits are capable of withstanding ESD stress far beyond standard HBM and CDM levels.

Features include:

  • 16kV HBM
  • 1000V CDM
  • Mil Spec
  • IEC 61000-4-2 system level ESD
  • IEC 61000-4-4 EMC burst immunity
  • Rad-Hard
  • High Temperature (200°C and above)
  • Charged Board Model
  • Cable Discharge Events

Ultra Volt

Protection from extreme voltages

UltraVolt protection circuits are capable of withstanding external voltages of 30V in a 1.8/3.3V standard CMOS process

Features include:

  • VPP and programming OverVoltage
  • High-Voltage MEMS and Analog interfaces 
  • High dBm RF - wide-swing high voltage tolerance as high as 100Vppdiff.
  • UltraVolt technology includes custom high-voltage ESD in BCD processes
  • Tolerate signal swings below ground

There are lots of factors to consider when choosing the right ESD protection for an analog component. Our experienced team will help you choose the best fit for your application. Diode clamps, snapback transistors or in-circuit driver transistors, our designs will give you the most protection with the least possible capacitance and in the most compact form.

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