Our GlobalFoundries 65nm IO Library offering includes:
- Wirebond support at a dual-row 45um pitch.
- 2.5V GPIO, LVDS TX & RX, 2.5V analog/RF cell, and associated ESD.
- Filler, corner, and domain break cells.
GPIO Features |
Selectable 12mA | 24mA drive strengths |
Up to 200MHz operation (@24mA, 10pF) |
Output enable (HiZ when disabled) |
Input enable (input low when disabled) |
Schmitt trigger receiver |
60KΩ selectabe pull-up or pull-down resistor |
ESD: 2KV HBM, 500V CDM1 |
1CDM rating is a function of package size. Rating shown is for nominal packages.

GPIO Block Diagram
65nm Library Operating Conditions
Parameter |
Value |
VDDIO
Core VDD |
2.5V±10%
1.2V±10% |
Tj
Max_Load |
-40°C to 125°C
15pF (10pF at speed) |
GlobalFoundries 65nm Library Cell Size & Metal Stack
Cell Size |
Type |
Metal Stack |
Wirebond Pitch |
45um x 200um
90um x 200um |
GPIO
LVDS TX / RX |
8M_1B1_1EA | 45um dual |
Library Cell Summary
Cell Type |
Feature |
Supply/ESD Cells
GPIO1 cell Analog/RF |
2.5V VDDIO; 1.2V VDD; GND
12mA | 24mA (up to 200 MHz) 1.5Gbps, no external reference 2.5V, low-capacitance |
Break cells
Filler cells Corner |
VDDIO, VDD
1um, 5um Corner cell |
112mA when DRV_STR=0, 24mA if DRV_STR=1. GPIO speeds are load dependent (faster for lighter loads, slower for heavier).
