Our GlobalFoundries 65nm IO Library offering includes:

  • Wirebond support at a dual-row 45um pitch.
  • 2.5V GPIO, LVDS TX & RX, 2.5V analog/RF cell, and associated ESD.
  • Filler, corner, and domain break cells.

GPIO Features

Selectable 12mA | 24mA drive strengths
Up to 200MHz operation (@24mA, 10pF)
Output enable (HiZ when disabled)
Input enable (input low when disabled)
Schmitt trigger receiver
60KΩ selectabe pull-up or pull-down resistor
ESD: 2KV HBM, 500V CDM1

1CDM rating is a function of package size. Rating shown is for nominal packages.

GPIO Block Diagram

65nm Library Operating Conditions

Parameter

Value

VDDIO

Core VDD

2.5V±10%

1.2V±10%

Tj

Max_Load

-40°C to 125°C

15pF (10pF at speed)

GlobalFoundries 65nm Library Cell Size & Metal Stack

Cell Size

Type

Metal Stack

Wirebond Pitch

45um x 200um

90um x 200um

GPIO

LVDS TX / RX

8M_1B1_1EA 45um dual

Library Cell Summary

Cell Type

Feature

Supply/ESD Cells

GPIO1 cell

LVDS TX & RX

Analog/RF

2.5V VDDIO; 1.2V VDD; GND

12mA | 24mA (up to 200 MHz)

1.5Gbps, no external reference

2.5V, low-capacitance

Break cells

Filler cells

Corner

VDDIO, VDD

1um, 5um

Corner cell

112mA when DRV_STR=0, 24mA if DRV_STR=1. GPIO speeds are load dependent (faster for lighter loads, slower for heavier).