Our TSMC 28nm IO Library offering includes:

  • Support for HPM and HPC+ process options.
  • Wirebond configurations across a variety of metal stacks and pad arrangements from 55um inline to 20um staggered.
  • Dynamically switchable 1.8V/3.3V GPIO, 5V I2C open-drain cell, 1.8V & 3.3V analog cells, HDMI & LVDS protection macros, OTP cell and associated ESD.

GPIO Features
Dynamic 1.8V / 3.3V switchable operation
25MHz, 75MHz & 150MHz speed options1
Full-speed output enable/disable (HiZ when disabled)
Independent power sequencing
Shorted output protection (fail safe)
Schmitt trigger receiver
60KΩ selectable pull-up or pull-down resistor
ESD: 2KV HBM, 500V CDM2, 2KV IEC 61000-4-23

1GPIO speeds are load dependent (faster for lighter loads, slower for heavier). Speeds shown are at 10pF.
2CDM rating is a function of package size. Rating shown is for nominal packages.
3Please contact a Certus representative for IEC 62100-4-2 protection levels achievable with your design.

 

GPIO Block Diagram

28nm Library Operating Conditions

Parameter

Value
VDDIO

VREF (for 3.3V operation)

Core VDD

 1.8V ± 10%, 3.3V ± 10%

1.8V ± 10%

0.9V ± 10%
Tj

Max_Load

 -40°C to 125°C

50pF (10pF at speed)

snap to section 28nm Library Size

28nm Library Cell Size & Metal Stack

Option Cell Size Metal Stack WireBond Pitch
1 55um x 75um 6M_4x1z 55um single
2 25um x 130um 7M_5x1z 25um dual
3 25um x 130um 9M_6x2z 25um dual
4 18um x 180um 9M_6x2z 20um triple

Option 1

  • 6 metals, 55um single-row pad pitch
  • Advantages: reduced cost & inline area optimization

Options 2&3

  • 7 or 9 metals, 25um dual row pad pitch
  • Advantages: 2 cost points, 2x perimeter efficiency

Option 4

  • 9 metals, 20um triple row pad pitch
  • Advantage: 25% additional perimeter efficiency

Library Cell Summary

Cell Type

Feature

Supply/ESD cells

GPIO cells1

RGMII cell

Secure Digital Cell

I2C Open-drain cell2

 1.8 / 3.3V VDDIO; 1.8V VREF; 0.9V VDD; GND

25MHz, 75MHz, 150 MHz options (fail safe)

1.8V, 125MHz

3.3V, 50MHz | 1.8V, 100MHz

1.8-5V, fail-safe
Analog cells

HDMI macro3

LVDS macro3

OTP cell

Break cells

Filler cells

Transition

 1.8V & 3.3V

3.3V, 5V tolerant, fail-safe

1.8V

5V programming gate cell

VDDIO, VDD, VSS

1um, 5um

Bridge to TSMC native IOs

1GPIO speeds are load dependent (faster for lighter loads, slower for heavier). Speeds shown are at 10pF
2Open drain cell is I2C, SMBus, DDC, CEC & HPD compliant
3Solution provides optimized low-capacitance ESD protection only.